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Modelling spectral irradiation effects on single and multi-junction amorphous silicon photovoltaic devices

机译：模拟光谱辐射对单结和多结非晶硅光伏器件的影响

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It has been previously reported that variations in the spectral irradiance under which an amorphous silicon device operates can have a significant effect on its electrical performance, often contributing to enhanced system yields compared to crystalline-based systems. In this work, spectral irradiance data based on models and measurements taken at the Centre for Renewable Energy Systems Technology (CREST) in the UK are presented. These are input into electrical models for amorphous silicon devices incorporating different number of junctions in order to investigate the impact of changing spectral irradiation. The results can be classified broadly as primary effects, those accounting for the available spectrally useful irradiance and secondary effects that consider the effects of mismatched currents in the stacked cells of multi-junction devices. The modeled short circuit currents correlate well with measurements and are demonstrated as a useful tool for further investigation.
机译：以前已经报道过，非晶硅器件在其下工作的光谱辐照度的变化会对其电性能产生重大影响，与基于晶体的系统相比，通常有助于提高系统的成品率。在这项工作中，展示了基于在英国可再生能源系统技术中心（CREST）进行的模型和测量的光谱辐照度数据。将这些输入到包含不同数量结的非晶硅器件的电气模型中，以研究变化的光谱辐射的影响。结果可以大致归类为主要效应，那些解释了光谱上可用的辐照度和考虑了多结器件堆叠电池中失配电流影响的次要效应。建模的短路电流与测量值密切相关，并被证明是进一步研究的有用工具。

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